instrument

  • Plasma CVD
    •
  • Base pressure : ~10^(-7) Torr
  • Max, temp : 1100 ℃
  • Heating method : Furnace
  • Gas : H2, N2, Ar
  • Precursor : Borazine

electrochemical reservation table
  • Raman Spectrometer
    •
  • Multiple excitation lasers : 2 lasers (532, 785 nm)
  • Objective lens : 20x, 100x
  • Slit : 10 ~ 3,000 μm
  • Grating : 600gr, 1200gr, 2400gr
  • Function : Mapping

electrochemical reservation table
  • Electrochemical Device
    •

    Voltage

  • Compliance: ±12 V; [0; 48] V with HCV-3048
  • Control voltage: ±10 V ; [0; 48] V with HCV-3048
  • Voltage resolution: 1 µV on 60 mV range

    • Current

  • Current ranges: 500 mA to 10 nA (standard); down to 1 pA (Ultra Low Current)
  • Maximum current: ±500 mA (standard); up to 120 A with four HCV-3048
  • Current resolution: 760 fA (standard) ; down to 76 aA (Ultra Low Current)

    • EIS

  • Frequency range: 7 MHz (3%, 3°) down to 10 µHz;; 3 MHz (1%, 1°)
  • EIS quality indicators

  • Thermal Evaporator
    •
  • min. Pressure : 10^(-6) torr
  • Metal : Ag, Au, Ni, Pd, Co
  • Rotating Stage

  • Arc Discharge
    •
  • min. Pressure : 10^(-3)
  • Working Pressure : 550 torr
  • Voltage : 30 V
  • Current : 200 A
  • Electrode : Tungsten, graphite

  • Parameter Analyzer and Electroanalysis Stage
    •

    Keithley 4200A-SCS

  • DC Current-Voltage(I-V) range : 10 aA - 1A, 0.2 µV - 210 V
  • Capacitance-Voltage (C-V) range : 1 kHz - 10 MHz, ± 30V DC bias
  • Pulsed I-V range : ±40 V (80 V p-p), ±800 mA, 200 MSa/sec, 5 ns sampling rate

  • CVD (for synthesizing CNT)
    •
  • Base Pressure : 10^(-3) torr
  • Working Pressure : 1 atm
  • Gas : Ar, H2, C2H4, CO
  • Heating System : Furnace
  • max. Temperature : 1100 ℃